| PartNumber | STFH13N60M2 | STFH10N60M6 | STFH10N60M2 |
| Description | MOSFET N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package | MOSFET | MOSFET N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | 600 V |
| Id Continuous Drain Current | 11 A | 6.4 A | 7.5 A |
| Rds On Drain Source Resistance | 350 mOhms | 600 mOhms | 550 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3.25 V | 2 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 17 nC | 8.8 nC | 13.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 25 W | 20 W | 25 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | MDmesh | - | MDmesh |
| Packaging | Tube | - | Tube |
| Series | STFH13N60M2 | - | STFH10N60M2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 9.5 ns | 10 ns | 13.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 8 ns | 8 ns |
| Factory Pack Quantity | 920 | 920 | 920 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 23 ns | 32.5 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 8.8 ns |
| Unit Weight | 0.003527 oz | - | 0.003527 oz |