 |  | | |
| PartNumber | STFI10N62K3 | STFI10N60M2 | STFI10N65K3 |
| Description | RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | MOSFET N-CH 650V 10A I2PAKFP | |
| Manufacturer | STMicroelectronics | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Series | N-channel MDmesh | - | - |
| Packaging | Tube | - | - |
| Mounting Style | Through Hole | - | - |
| Package Case | I2PAKFP-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 31 ns | - | - |
| Rise Time | 15 ns | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Id Continuous Drain Current | 8.4 A | - | - |
| Vds Drain Source Breakdown Voltage | 620 V | - | - |
| Vgs th Gate Source Threshold Voltage | 3.75 V | - | - |
| Rds On Drain Source Resistance | 680 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 14.5 ns | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Channel Mode | Enhancement | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STFI10N62K3 | RF Bipolar Transistors MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3 | |
| STFI10N65K3 | MOSFET N-CH 650V 10A I2PAKFP | ||
| STFI10N60M2 | 全新原装 |