STGB10NB4

STGB10NB40LZT4 vs STGB10NB40LZ vs STGB10NB40LZ GB10NB40LZ

 
PartNumberSTGB10NB40LZT4STGB10NB40LZSTGB10NB40LZ GB10NB40LZ
DescriptionIGBT Transistors N-Ch Clamped 20 Amp
ManufacturerSTMicroelectronicsST-
Product CategoryIGBT TransistorsIGBTs - Single-
RoHSY--
TechnologySi--
Package / CaseD2PAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.8 V--
Collector Emitter Saturation Voltage1.2 V--
Maximum Gate Emitter Voltage12 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation150 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGB10NB40LZT4--
QualificationAEC-Q101--
PackagingReel--
Continuous Collector Current Ic Max20 A--
Height4.6 mm--
Length10.4 mm--
Width9.35 mm--
BrandSTMicroelectronics--
Continuous Collector Current20 A--
Gate Emitter Leakage Current700 uA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.079014 oz--
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STGB10NB40LZT4 IGBT Transistors N-Ch Clamped 20 Amp
STGB10NB40LZT4 IGBT 440V 20A 150W D2PAK
STGB10NB40LZ 全新原装
STGB10NB40LZ GB10NB40LZ 全新原装
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