STGD10NC60K

STGD10NC60KDT4 vs STGD10NC60K vs STGD10NC60KD

 
PartNumberSTGD10NC60KDT4STGD10NC60KSTGD10NC60KD
DescriptionIGBT Transistors N Ch 600V 10A
ManufacturerSTMicroelectronicsSTSTMicroelectronics
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT-SMD/SMT
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V-+/- 20 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTGD10NC60KDT4-PowerMESH
PackagingReel-Digi-ReelR Alternate Packaging
Continuous Collector Current Ic Max20 A-20 A
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz-0.012346 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--62W
Reverse Recovery Time trr--22ns
Current Collector Ic Max--20A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--30A
Vce on Max Vge Ic--2.5V @ 15V, 5A
Switching Energy--55μJ (on), 85μJ (off)
Gate Charge--19nC
Td on off 25°C--17ns/72ns
Test Condition--390V, 5A, 10 Ohm, 15V
Collector Emitter Voltage VCEO Max--600 V
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STGD10NC60KDT4 IGBT Transistors N Ch 600V 10A
STGD10NC60KT4 IGBT Transistors IGBT
STGD10NC60KDT4 IGBT Transistors N Ch 600V 10A
STGD10NC60K 全新原装
STGD10NC60KD 全新原装
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