STGD18N40LZT

STGD18N40LZT4 vs STGD18N40LZT4-CUT TAPE vs STGD18N40LZT

 
PartNumberSTGD18N40LZT4STGD18N40LZT4-CUT TAPESTGD18N40LZT
DescriptionIGBT Transistors EAS 180 mJ-400 V clamped IGBT
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT-SMD/SMT
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max360 V--
Maximum Gate Emitter Voltage12 V-12 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTGD18N40LZ-PowerMESH
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
Continuous Collector Current Ic Max25 A-25 A
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz-0.012346 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Logic
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--125W
Reverse Recovery Time trr---
Current Collector Ic Max--25A
Voltage Collector Emitter Breakdown Max--420V
IGBT Type---
Current Collector Pulsed Icm--40A
Vce on Max Vge Ic--1.7V @ 4.5V, 10A
Switching Energy---
Gate Charge--29nc
Td on off 25°C--650ns/13.5μs
Test Condition--300V, 10A, 5V
Collector Emitter Voltage VCEO Max--360 V
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STGD18N40LZT4 IGBT Transistors EAS 180 mJ-400 V clamped IGBT
STGD18N40LZT4 IGBT Transistors EAS 180 mJ-400 V clamped IGBT
STGD18N40LZT4-CUT TAPE 全新原装
STGD18N40LZT 全新原装
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