STGD6NC60HD

STGD6NC60HDT4 vs STGD6NC60HDT4-CUT TAPE vs STGD6NC60HD

 
PartNumberSTGD6NC60HDT4STGD6NC60HDT4-CUT TAPESTGD6NC60HD
DescriptionIGBT Transistors PowerMESH&#34 IGBT
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT-SMD/SMT
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.9 V-1.9 V
Maximum Gate Emitter Voltage20 V-+/- 20 V
Pd Power Dissipation50 W--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSTGD6NC60HDT4-PowerMESH
PackagingReel-Digi-ReelR Alternate Packaging
Continuous Collector Current Ic Max15 A-15 A
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Continuous Collector Current6 A--
Gate Emitter Leakage Current100 nA-100 nA
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.012346 oz-0.012346 oz
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--56W
Reverse Recovery Time trr--21ns
Current Collector Ic Max--15A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--21A
Vce on Max Vge Ic--2.5V @ 15V, 3A
Switching Energy--20μJ (on), 68μJ (off)
Gate Charge--13.6nC
Td on off 25°C--12ns/76ns
Test Condition--390V, 3A, 10 Ohm, 15V
Pd Power Dissipation--50 W
Collector Emitter Voltage VCEO Max--600 V
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STGD6NC60HDT4 IGBT Transistors PowerMESH&#34 IGBT
STGD6NC60HDT4 IGBT 600V 15A 56W DPAK
STGD6NC60HDT4-CUT TAPE 全新原装
STGD6NC60HD 全新原装
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