STGP10NB

STGP10NB60SD vs STGP10NB60S vs STGP10NB37LZ

 
PartNumberSTGP10NB60SDSTGP10NB60SSTGP10NB37LZ
DescriptionIGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESHIGBT Transistors N-Ch 600 Volt 10 AmpIGBT Transistors N-Ch Clamped 20 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
Package / CaseTO-220-3TO-220-3TO-220-3
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V600 V1.8 V
Maximum Gate Emitter Voltage20 V20 V16 V
Pd Power Dissipation3.5 W80 W125 W
Minimum Operating Temperature- 65 C- 55 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesSTGP10NB60SDSTGP10NB60SSTGP10NB37LZ
PackagingTubeTubeTube
Continuous Collector Current Ic Max20 A20 A20 A
Height9.15 mm9.15 mm9.15 mm
Length10.4 mm10.4 mm10.4 mm
Width4.6 mm4.6 mm4.6 mm
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity1000100050
SubcategoryIGBTsIGBTsIGBTs
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Collector Emitter Saturation Voltage-1.7 V1.8 V
Continuous Collector Current at 25 C-20 A20 A
Continuous Collector Current-10 A20 A
Gate Emitter Leakage Current-+/- 100 nA+/- 700 uA
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STGP10NB60SD IGBT Transistors N-Ch 600 V 10 A Low Drop PowerMESH
STGP10NB60S IGBT Transistors N-Ch 600 Volt 10 Amp
STGP10NB37LZ IGBT Transistors N-Ch Clamped 20 Amp
STGP10NB60S IGBT 600V 29A 80W TO220
STGP10NB60SD IGBT 600V 29A 80W TO220
STGP10NB37LZ IGBT 440V 20A 125W TO220
STGP10NB60SFP IGBT 600V 23A 25W TO220
STGP10NB60SDFP 全新原装
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