 |  |  | |
| PartNumber | STI21N65M5 | STI21NM60ND | STI21NM60ND,21NM60ND |
| Description | MOSFET N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh | MOSFET N-CH 600V 17A I2PAK | |
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-262-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 17 A | - | - |
| Rds On Drain Source Resistance | 179 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 50 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Series | STI21N65M5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.050717 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STI21N65M5 | MOSFET N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh | |
| STI21N65M5 | IGBT Transistors MOSFET N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh | ||
| STI21NM60ND | MOSFET N-CH 600V 17A I2PAK | ||
| STI21NM60ND,21NM60ND | 全新原装 |