STP50NE

STP50NE10 vs STP50NE08 vs STP50NE10L

 
PartNumberSTP50NE10STP50NE08STP50NE10L
DescriptionMOSFET N-Ch 100 Volt 50 AmpMOSFET N-CH 80V 50A TO-220MOSFET N-Ch 100 Volt 50 Amp
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance27 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation180 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height9.15 mm--
Length10.4 mm--
SeriesSTP50NE10--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.6 mm--
BrandSTMicroelectronics--
Forward Transconductance Min35 S--
Product TypeMOSFET--
Rise Time135 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn On Delay Time34 ns--
Unit Weight0.011640 oz--
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STP50NE10 MOSFET N-Ch 100 Volt 50 Amp
STP50NE08 MOSFET N-CH 80V 50A TO-220
STP50NE10 MOSFET N-CH 100V 50A TO-220
STP50NE10L MOSFET N-Ch 100 Volt 50 Amp
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