 |  | | |
| PartNumber | STP7NM80 | STP7NM60N | STP7NM50N |
| Description | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | IGBT Transistors MOSFET N-Ch 600V 0.84 Ohm 5A Second Gen Mdmesh | MOSFET N-CH 500V 5A TO-220 |
| Manufacturer | STMicroelectronics | ST/ | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 6.5 A | - | - |
| Rds On Drain Source Resistance | 1.05 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 90 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Height | 9.15 mm | - | - |
| Length | 10.4 mm | - | - |
| Series | STP7NM80 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.6 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP7NM80 | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | |
| STP7NM60N | IGBT Transistors MOSFET N-Ch 600V 0.84 Ohm 5A Second Gen Mdmesh | ||
| STP7NM50N | MOSFET N-CH 500V 5A TO-220 | ||
| STP7NM80 | MOSFET N-CH 800V 6.5A TO-220 | ||
| STP7NM80,7NM80 | 全新原装 |