 |  | | |
| PartNumber | STQ1HNK60R-AP | STQ1HNK60 | STQ1HNK60R |
| Description | MOSFET POWER MOSFET | ||
| Manufacturer | STMicroelectronics | ST | ST |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 400 mA | - | - |
| Rds On Drain Source Resistance | 8.5 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 30 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 4.95 mm | - | - |
| Length | 4.95 mm | - | - |
| Series | STQ1HNK60R | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.94 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 6.5 ns | - | - |
| Unit Weight | 0.007760 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STQ1HNK60R-AP | MOSFET POWER MOSFET | |
| STQ1HNK60R-AP | MOSFET N-CH 600V 400MA TO-92 | ||
| STQ1HNK60 | 全新原装 | ||
| STQ1HNK60R | 全新原装 | ||
| STQ1HNK60R-AR | 全新原装 | ||
| STQ1HNK60-R | 全新原装 | ||
| STQ1HNK60R-AT | 全新原装 | ||
| STQ1HNK60RAP | 全新原装 | ||
| STQ1HNK60Z | 全新原装 |