 |  | | |
| PartNumber | STQ1NK80ZR-AP | STQ1NK80Z | STQ1NK80ZR |
| Description | MOSFET N Ch 800V 13 Ohm 1A | ||
| Manufacturer | STMicroelectronics | - | ST |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 300 mA | - | - |
| Rds On Drain Source Resistance | 16 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 3 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Ammo Pack | - | Ammo Pack |
| Height | 4.95 mm | - | - |
| Length | 4.95 mm | - | - |
| Series | STQ1NK80ZR-AP | - | STQ1NK80ZR-AP |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 3.94 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 55 ns | - | 55 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | 30 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 22 ns | - | 22 ns |
| Typical Turn On Delay Time | 8 ns | - | 8 ns |
| Unit Weight | 0.007760 oz | - | 0.007760 oz |
| Package Case | - | - | TO-92-3 |
| Pd Power Dissipation | - | - | 3 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 300 mA |
| Vds Drain Source Breakdown Voltage | - | - | 800 V |
| Rds On Drain Source Resistance | - | - | 16 Ohms |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STQ1NK80ZR-AP | MOSFET N Ch 800V 13 Ohm 1A | |
| STQ1NK80ZR-AP | MOSFET N-CH 800V 0.3A TO-92 | ||
| STQ1NK80Z | 全新原装 | ||
| STQ1NK80ZR | 全新原装 |