 | |  | |
| PartNumber | STT818B | STT6N3LLH6 | STT7P2UH7 |
| Description | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | MOSFET N-Ch 30V .025Ohm 6A STripFET VI | MOSFET P-CH 20V 7A SOT23-6 |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | Bipolar Transistors - BJT | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-6 | SOT-23-6 | - |
| Transistor Polarity | PNP | N-Channel | P-Channel |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | - 30 V | - | - |
| Collector Base Voltage VCBO | - 30 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.21 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | STT818B | STT6N3LLH6 | STripFET |
| Height | 1.3 mm | - | - |
| Length | 3.05 mm | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Width | 1.75 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Continuous Collector Current | - 3 A | - | - |
| Pd Power Dissipation | 1200 mW | 1.6 W | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | MOSFETs | - |
| Unit Weight | 0.000229 oz | 0.000229 oz | 0.001270 oz |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 6 A | - |
| Rds On Drain Source Resistance | - | 25 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 3.6 nC | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | STripFET | - |
| Transistor Type | - | 1 N-Channel Power MOSFET | 1 P-Channel |
| Fall Time | - | 5.4 ns | 84.5 ns |
| Rise Time | - | 11.2 ns | 30.5 ns |
| Typical Turn Off Delay Time | - | 9.4 ns | 128 ns |
| Typical Turn On Delay Time | - | 4.8 ns | 12.5 ns |
| Package Case | - | - | SOT-23-6 |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23-6 |
| FET Type | - | - | MOSFET P-Channel, Metal Oxide |
| Power Max | - | - | 1.6W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 2390pF @ 16V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 7A (Tc) |
| Rds On Max Id Vgs | - | - | 22.5 mOhm @ 3.5A, 4.5V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 22nC @ 4.5V |
| Pd Power Dissipation | - | - | 1.6 W |
| Vgs Gate Source Voltage | - | - | 8 V |
| Id Continuous Drain Current | - | - | 7 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1 V |
| Rds On Drain Source Resistance | - | - | 22.5 mOhms |
| Qg Gate Charge | - | - | 22 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STT818B | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | |
| STT6N3LLH6 | MOSFET N-Ch 30V .025Ohm 6A STripFET VI | ||
| STT818B | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | ||
| STT6N3LLH6 | MOSFET N-CH 30V 6A SOT23-6 | ||
| STT7P2UH7 | MOSFET P-CH 20V 7A SOT23-6 | ||
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