| PartNumber | STU16N60M2 | STU16N65M2 | STU16N65M5 |
| Description | MOSFET N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package | MOSFET N-CH 65V 12A MDMESH |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Configuration | Single | Single | Single |
| Tradename | MDmesh | - | - |
| Series | STU16N60M2 | STU16N65M2 | STI16N65M5 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
| Vds Drain Source Breakdown Voltage | - | 650 V | 650 V |
| Id Continuous Drain Current | - | 11 A | 12 A |
| Rds On Drain Source Resistance | - | 360 mOhms | 299 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 25 V | 25 V |
| Qg Gate Charge | - | 19.5 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 110 W | 90 W |
| Channel Mode | - | Enhancement | Enhancement |
| Packaging | - | Tube | Tube |
| Fall Time | - | 11.3 ns | 7 ns |
| Rise Time | - | 8.2 ns | 9 ns |
| Typical Turn Off Delay Time | - | 36 ns | 30 ns |
| Typical Turn On Delay Time | - | 11.3 ns | 25 ns |
| Height | - | - | 6.2 mm |
| Length | - | - | 6.6 mm |
| Width | - | - | 2.4 mm |