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| PartNumber | STWA65N60DM6 | STWA63N65DM2 | STWA65N65DM2AG |
| Description | MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 long leads package | MOSFET | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-247-3 | - | TO-247-3 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | 650 V |
| Id Continuous Drain Current | 38 A | - | 60 A |
| Rds On Drain Source Resistance | 71 mOhms | - | 50 mOhms |
| Qg Gate Charge | 61 nC | - | 120 nC |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Tube | - | - |
| Series | DM6 | STWA63N65DM2 | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Vgs Gate Source Voltage | - | - | 10 V |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 446 W |
| Transistor Type | - | - | 1 N-Channel |
| Fall Time | - | - | 11.5 ns |
| Rise Time | - | - | 13.5 ns |
| Typical Turn Off Delay Time | - | - | 114 ns |
| Typical Turn On Delay Time | - | - | 33 ns |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
STMicroelectronics |
STWA65N60DM6 | MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 long leads package | |
| STWA63N65DM2 | MOSFET | ||
| STWA65N65DM2AG | MOSFET | ||
| STWA68N60M6 | MOSFET |