STY8

STY80NM60N vs STY8 2V vs STY80NM60N,80NM60N

 
PartNumberSTY80NM60NSTY8 2VSTY80NM60N,80NM60N
DescriptionMOSFET N-channel 600 V, 74A Power II Mdmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseMax247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current74 A--
Rds On Drain Source Resistance35 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation447 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.3 mm--
Length15.9 mm--
SeriesSTY80NM60N--
Transistor Type1 N-Channel--
Width5.3 mm--
BrandSTMicroelectronics--
Fall Time200 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Typical Turn Off Delay Time440 ns--
Typical Turn On Delay Time50 ns--
Unit Weight1.340411 oz--
制造商 型号 描述 RFQ
STMicroelectronics
STMicroelectronics
STY80NM60N MOSFET N-channel 600 V, 74A Power II Mdmesh
STY80NM60N MOSFET N-channel 600 V, 74A Power II Mdmesh
STY8 2V 全新原装
STY80NM60N,80NM60N 全新原装
STY8163 全新原装
Top