 |  | | |
| PartNumber | SUD40N08-16-E3 | SUD40N08-16 | SUD40N08-16-T4 |
| Description | MOSFET 80V 40A 100W | MOSFET 80V 40A 100W | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 42 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SUD | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 45 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 52 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUD40N08-16-E3 | MOSFET 80V 40A 100W | |
| SUD40N08-16 | MOSFET 80V 40A 100W | ||
| SUD40N08-16-T4 | 全新原装 | ||
| SUD40N08-16-T4-E3 | 全新原装 | ||
| SUD40N08-16_08 | 全新原装 | ||
| SUD40N08-17-E3 | 全新原装 | ||
| SUD40N08-17-T4-E3 | 全新原装 | ||
| SUD40N0816E3 | Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
Vishay |
SUD40N08-16-E3 | MOSFET N-CH 80V 40A TO252 |