| PartNumber | SUD50P06-15L-T4-E3 | SUD50P06-15-GE3 | SUD50P06-15L-E3 |
| Description | MOSFET P-Channel 60-V D-S | MOSFET 60V 50A 113W 15mohm @ 10V | MOSFET P-CH 60V 50A |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SUD | SUD | SUD |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TO-252-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 15 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 165 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 113 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 2.38 mm | - |
| Length | - | 6.73 mm | - |
| Width | - | 6.22 mm | - |
| Forward Transconductance Min | - | 61 S | - |
| Fall Time | - | 175 ns | - |
| Rise Time | - | 70 ns | - |
| Typical Turn Off Delay Time | - | 175 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |