 |  |  | |
| PartNumber | T1G4012036-FL | T1G4012036-FS | T1G4012036-FS-EVB1 |
| Description | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | |
| Manufacturer | Cree, Inc. | Qorvo | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | HEMT | pHEMT | - |
| Technology | GaN SiC | GaAs | - |
| Gain | 17 dB | 10.4 dB | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | 12 V | - |
| Id Continuous Drain Current | 7.5 A | 517 mA | - |
| Output Power | 170 W | - | - |
| Maximum Operating Temperature | + 225 C | + 150 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | H-37265J-2 | - | - |
| Packaging | Reel | Gel Pack | - |
| Configuration | Single | Dual | - |
| Operating Frequency | 2620 MHz to 2690 MHz | 20 GHz | - |
| Brand | Wolfspeed / Cree | Qorvo | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 250 | 100 | - |
| Subcategory | Transistors | Transistors | - |
| Vgs th Gate Source Threshold Voltage | - 3.8 V | - | - |
| Vgs Gate Source Breakdown Voltage | - | - 7 V | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Pd Power Dissipation | - | 5.6 W | - |
| Operating Temperature Range | - | - 65 C to + 150 C | - |
| Product | - | RF JFET | - |
| Type | - | GaAs pHEMT | - |
| Forward Transconductance Min | - | 619 mS | - |
| Number of Channels | - | 2 Channel | - |
| P1dB Compression Point | - | 32.5 dBm | - |
| Part # Aliases | - | 1098617 | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Qorvo |
T1G4012036-FL | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | |
| T1G4012036-FS | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | ||
| T1G4012036-FL | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | ||
| T1G4012036-FS | RF JFET Transistors DC-3.5GHz 36Volt GaN 120 Watt Peak | ||
| T1G4012036-FS-EVB1 | 全新原装 | ||
| T1G4012036-XCC-1-FS | 全新原装 |