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| PartNumber | TH58NYG3S0HBAI4 | TH58NYG2S3HBAI4 | TH58NYG2S3HBAI6 |
| Description | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TFBGA-63 | TFBGA-63 | VFBGA-67 |
| Memory Size | 8 Gbit | 4 Gbit | 4 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 1 G x 8 | 512 M x 8 | 512 M x 8 |
| Timing Type | Synchronous | Synchronous | - |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
| Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
| Supply Current Max | 30 mA | 30 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Packaging | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND |
| Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 210 | 210 | 210 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Product | - | NAND Flash | - |
| Speed | - | 25 ns | - |
| Architecture | - | Block Erase | - |
| Maximum Clock Frequency | - | - | - |
