TJ30S06M3L

TJ30S06M3L(T6L1,NQ vs TJ30S06M3L vs TJ30S06M3L(T6L1NQ

 
PartNumberTJ30S06M3L(T6L1,NQTJ30S06M3LTJ30S06M3L(T6L1NQ
DescriptionMOSFET P-Ch MOS -30A -60V 68W 3950pF 0.0218
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance21.8 mOhms--
Pd Power Dissipation68 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesTJ30S06M3L--
Transistor Type1 P-Channel--
Width5.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Unit Weight0.011993 oz--
制造商 型号 描述 RFQ
Toshiba
Toshiba
TJ30S06M3L(T6L1,NQ MOSFET P-Ch MOS -30A -60V 68W 3950pF 0.0218
TJ30S06M3L(T6L1,NQ MOSFET P-Ch MOS -30A -60V 68W 3950pF 0.0218
TJ30S06M3L 全新原装
TJ30S06M3L(T6L1NQ 全新原装
TJ30S06M3L(T6L1NQ-ND 全新原装
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