TK20A60U(ST

TK20A60U(STA4,Q,M) vs TK20A60U(STA4 vs TK20A60U(STA4 Q M)

 
PartNumberTK20A60U(STA4,Q,M)TK20A60U(STA4TK20A60U(STA4 Q M)
DescriptionMOSFET N-Ch FET 600V 12s IDSS 100 uA
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance190 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Qg Gate Charge27 nC--
Pd Power Dissipation45 W--
ConfigurationSingle--
TradenameDTMOSIV--
Height15 mm--
Length10 mm--
ProductDTMOS--
SeriesTK20A60U--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time80 ns--
制造商 型号 描述 RFQ
Toshiba
Toshiba
TK20A60U(STA4,Q,M) MOSFET N-Ch FET 600V 12s IDSS 100 uA
TK20A60U(STA4,Q,M) MOSFET N-Ch FET 600V 12s IDSS 100 uA
TK20A60U(STA4 全新原装
TK20A60U(STA4 Q M) 全新原装
TK20A60U(STA4,X,M) 全新原装
TK20A60U(STA4.Q) 全新原装
TK20A60U(STA4.X.S) 全新原装
TK20A60U(STA4QM 全新原装
TK20A60U(STA4QM) 全新原装
TK20A60U(STA4XM) 全新原装
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