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| PartNumber | TK39J60W5,S1VQ | TK39J60W5,S1VQ(O | TK39J60W5 |
| Description | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC | MOSFET DTMOS4 600V/39A TO3PN, EA | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3PN-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 38.8 A | - | - |
| Rds On Drain Source Resistance | 55 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 110 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 270 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 20 mm | - | - |
| Length | 15.5 mm | - | - |
| Series | TK39J60W5 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 200 ns | - | - |
| Typical Turn On Delay Time | 80 ns | - | - |
| Unit Weight | 0.245577 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK39J60W5,S1VQ | MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC | |
| TK39J60W5,S1VQ | Darlington Transistors MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC | ||
| TK39J60W5,S1VQ(O | MOSFET DTMOS4 600V/39A TO3PN, EA | ||
| TK39J60W5 | 全新原装 | ||
| TK39J60W5S1EMRQ(O | 全新原装 | ||
| TK39J60W5S1VQ | Trans MOSFET N 600V 38.8A 3-Pin SC-65 Bag - Rail/Tube (Alt: TK39J60W5,S1VQ) | ||
| TK39J60W5S1VQ(O | 全新原装 | ||
| TK39J60W5S1VQ-ND | 全新原装 |