TK42E

TK42E12N1,S1X vs TK42E12N1 vs TK42E12N1 S1X

 
PartNumberTK42E12N1,S1XTK42E12N1TK42E12N1 S1X
DescriptionMOSFET N-Ch 88A 140W FET 120V 3100pF 52nC
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Id Continuous Drain Current88 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge52 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height15.1 mm--
Length10.16 mm--
SeriesTK42E12N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time18 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time40 ns--
Unit Weight0.211644 oz--
制造商 型号 描述 RFQ
Toshiba
Toshiba
TK42E12N1,S1X MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC
TK42E12N1,S1X Darlington Transistors MOSFET N-Ch 88A 140W FET 120V 3100pF 52nC
TK42E12N1 全新原装
TK42E12N1 S1X 全新原装
TK42E12N1,S1X(S 全新原装
TK42E12N1S1X Trans MOSFET N 120V 88A 3-Pin TO-220 Tube - Rail/Tube (Alt: TK42E12N1,S1X)
TK42E12N1S1X(S 全新原装
TK42E12N1S1X(S) 全新原装
TK42E12N1S1X-ND 全新原装
Top