PartNumber | TK58A06N1,S4X | TK58A06M | TK58A06N1 |
Description | MOSFET MOSFET NCh 4.4ohm VGS10V10uAVDS60V | ||
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220FP-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 58 A | - | - |
Rds On Drain Source Resistance | 4.4 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 46 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 35 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Height | 15 mm | - | - |
Length | 10 mm | - | - |
Series | TK58A06N1 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 4.5 mm | - | - |
Brand | Toshiba | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.211644 oz | - | - |