 |  | | |
| PartNumber | TK6Q60W,S1VQ | TK6Q60V | TK6Q60W |
| Description | MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 6.2 A | - | - |
| Rds On Drain Source Resistance | 680 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Configuration | Single | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 6.1 mm | - | - |
| Length | 6.65 mm | - | - |
| Series | TK6Q60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 2.3 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
TK6Q60W,S1VQ | MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | |
| TK6Q60W,S1VQ | Darlington Transistors MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC | ||
| TK6Q60V | 全新原装 | ||
| TK6Q60W | 全新原装 | ||
| TK6Q60W,S1VQ(S | 全新原装 | ||
| TK6Q60WS1VQ | Trans MOSFET N 600V 6.2A 3-Pin IPAK Tube - Rail/Tube (Alt: TK6Q60W,S1VQ) | ||
| TK6Q60WS1VQ(S | 全新原装 | ||
| TK6Q60WS1VQ-ND | 全新原装 |