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| PartNumber | TK8P60W5,RVQ | TK8P60W,RVQ | TK8A65W,S5X |
| Description | MOSFET Power MOSFET N-Channel | MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC | MOSFET Power MOSFET N-Channel |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-252-3 | TO-252-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
| Id Continuous Drain Current | 8 A | 8 A | 7.8 A |
| Rds On Drain Source Resistance | 440 mOhms | 420 mOhms | 530 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.7 V | 2.5 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 22 nC | 18.5 nC | 16 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 80 W | 80 W | 30 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | 15 mm |
| Length | 6.5 mm | 6.5 mm | 10 mm |
| Series | TK8P60W5 | TK8P60W | TK8A65W |
| Width | 5.5 mm | 5.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 5.5 ns | 5.5 ns | 4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 20 ns | 20 ns |
| Factory Pack Quantity | 2000 | 2000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 70 ns | 70 ns | 60 ns |
| Typical Turn On Delay Time | 60 ns | 40 ns | 40 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.211644 oz |
| Transistor Type | - | 1 N-Channel | - |
