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| PartNumber | TP2535N3-G | TP2535N3-G P002 | TP2535N3 |
| Description | MOSFET 350V 25Ohm | RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET | MOSFET 350V 25Ohm |
| Manufacturer | Microchip | Microchip Technology | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 350 V | - | - |
| Id Continuous Drain Current | 86 mA | - | - |
| Rds On Drain Source Resistance | 25 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 740 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Bulk | Reel | - |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | - | - |
| Fall Time | 10 ns | 13 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Unit Weight | 0.016000 oz | 0.016000 oz | - |
| Package Case | - | TO-92-3 | - |
| Pd Power Dissipation | - | 740 mW | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | - 86 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 350 V | - |
| Rds On Drain Source Resistance | - | 30 Ohms | - |