TPH1110F

TPH1110FNH,L1Q vs TPH1110FNH vs TPH1110FNH,L1Q(M

 
PartNumberTPH1110FNH,L1QTPH1110FNHTPH1110FNH,L1Q(M
DescriptionMOSFET X35PBF Power MOSFET Transistr95ohm250V
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance95 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length5 mm--
SeriesTPH1110FNH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Unit Weight0.030018 oz--
制造商 型号 描述 RFQ
Toshiba
Toshiba
TPH1110FNH,L1Q MOSFET X35PBF Power MOSFET Transistr95ohm250V
TPH1110FNH,L1Q MOSFET X35PBF Power MOSFET Transistr95ohm250V
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