TPH4R606NH,L

TPH4R606NH,L1Q vs TPH4R606NH,L1Q(M

 
PartNumberTPH4R606NH,L1QTPH4R606NH,L1Q(M
DescriptionMOSFET U-MOSVIII-H 60V 85A 49nC MOSFETTPH4R606NH,L1Q(M
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseSOP-Advance-8-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage60 V-
Id Continuous Drain Current85 A-
Rds On Drain Source Resistance3.8 mOhms-
Vgs th Gate Source Threshold Voltage4 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge49 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation63 W-
ConfigurationSingle-
Channel ModeEnhancement-
PackagingReel-
Height0.95 mm-
Length5 mm-
SeriesTPH4R606NH-
Transistor Type1 N-Channel-
Width5 mm-
BrandToshiba-
Fall Time14 ns-
Product TypeMOSFET-
Rise Time10 ns-
Factory Pack Quantity5000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time37 ns-
Typical Turn On Delay Time24 ns-
Unit Weight0.030018 oz-
制造商 型号 描述 RFQ
Toshiba
Toshiba
TPH4R606NH,L1Q MOSFET U-MOSVIII-H 60V 85A 49nC MOSFET
TPH4R606NH,L1Q MOSFET N CH 60V 32A 8-SOP ADV
TPH4R606NH,L1Q(M TPH4R606NH,L1Q(M
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