| PartNumber | TPS1120DR | TPS1120D | TPS1120DG4 |
| Description | MOSFET Dual P-Ch Enh-Mode MOSFET | MOSFET Dual P-Ch Enh-Mode MOSFET | MOSFET Dual P-Ch Enh-Mode MOSFET |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOIC-8 | SOIC-8 | SOIC-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 15 V | 15 V | 15 V |
| Id Continuous Drain Current | 1.17 A | 1.17 A | 2.7 A |
| Rds On Drain Source Resistance | 180 mOhms | 180 mOhms | 180 mOhms |
| Vgs Gate Source Voltage | 2 V, - 15 V | 2 V, - 15 V | 2 V, - 15 V |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
| Pd Power Dissipation | 840 mW | 840 mW | 840 mW |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Tube | Tube |
| Height | 1.75 mm | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm | 4.9 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
| Series | TPS1120 | TPS1120 | TPS1120 |
| Transistor Type | 2 P-Channel | 2 P-Channel | 2 P-Channel |
| Type | PMOS Switches | PMOS Switches | Dual P-Channel Enhancement-Mode |
| Width | 3.9 mm | 3.9 mm | 3.9 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | 10 ns |
| Factory Pack Quantity | 2500 | 75 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | 13 ns | 13 ns |
| Typical Turn On Delay Time | 4.5 ns | 4.5 ns | 4.5 ns |
| Unit Weight | 0.002677 oz | 0.002677 oz | 0.002677 oz |
| Forward Transconductance Min | - | - | 2.5 S |