TS13003C

TS13003CKB0G vs TS13003CT A3 vs TS13003CT

 
PartNumberTS13003CKB0GTS13003CT A3TS13003CT
DescriptionBipolar Transistors - BJT NPN 700V 1.5A High Voltage/Speed
Manufacturer--Taiwan Semiconductor
Product Category--Transistors - Bipolar (BJT) - RF
Packaging--Ammo Pack
Part Aliases--A3G
Unit Weight--0.016000 oz
Mounting Style--Through Hole
Package Case--TO-92-3
Configuration--Single
Pd Power Dissipation--1500 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--400 V
Transistor Polarity--NPN
Collector Base Voltage VCBO--700 V
Emitter Base Voltage VEBO--9 V
Maximum DC Collector Current--1.5 A
Gain Bandwidth Product fT--4 MHz
DC Collector Base Gain hfe Min--6 at 10 mA at 5 V 20 at 400 mA at 10 V 6 at 1 A at 2 V
DC Current Gain hFE Max--6 at 10 mA at 5 V
制造商 型号 描述 RFQ
TS13003CKB0G 全新原装
TS13003CT A3 全新原装
TS13003CT A3G HI VOLT NPN TRANSISTOR TS13003CT A3, PK
TS13003CT B0 全新原装
TS13003CTA3 全新原装
TS13003CTA3G 全新原装
TS13003CTB0 全新原装
TS13003CT Bipolar Transistors - BJT NPN 700V 1.5A High Voltage/Speed
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