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| PartNumber | TSM10N80CI C0G | TSM10N80CZ C0G |
| Description | MOSFET 800V 10A N Channel Power Mosfet | MOSFET 800V 10Amp N channel Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | ITO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V |
| Id Continuous Drain Current | 9.5 A | 9.5 A |
| Rds On Drain Source Resistance | 900 mOhms | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 53 nC | 53 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor |
| Forward Transconductance Min | 6.3 S | - |
| Fall Time | 72 ns | 72 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 62 ns | 62 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 256 ns | 256 ns |
| Typical Turn On Delay Time | 63 ns | 63 ns |
| Unit Weight | 0.211644 oz | 0.063493 oz |
| Pd Power Dissipation | - | 290 W |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM10N80CI C0G | MOSFET 800V 10A N Channel Power Mosfet | |
| TSM10N80CZ C0G | MOSFET 800V 10Amp N channel Mosfet | ||
| TSM10N80CI C0G | MOSFET 800V 10A N Channel Power Mosfet | ||
| TSM10N80CZ C0G | MOSFET 800V 10Amp N channel Mosfet | ||
| TSM10N80CZ C0 | MOSFET 800V 10A N Channel Mosfet | ||
| TSM10N80CI | 全新原装 |