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| PartNumber | TSM2301CX RFG | TSM2301CX | TSM2301CX RF |
| Description | MOSFET 20V P channel Mosfet | IGBT Transistors MOSFET 20V P channel MOSFET | |
| Manufacturer | Taiwan Semiconductor | TAIWAN SEMICONDUCTOR | - |
| Product Category | MOSFET | IC Chips | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.8 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 450 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 5.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 900 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Product | Rectifiers | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Taiwan Semiconductor | - | - |
| Forward Transconductance Min | 6.5 S | - | - |
| Fall Time | 65 ns | 19 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 19 ns | 19 ns | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 95 ns | 95 ns | - |
| Typical Turn On Delay Time | 5 ns | 5 ns | - |
| Packaging | - | Reel | - |
| Part Aliases | - | RF | - |
| Unit Weight | - | 0.050717 oz | - |
| Package Case | - | SOT-23-3 | - |
| Pd Power Dissipation | - | 900 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | - 2.8 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 0.95 V | - |
| Rds On Drain Source Resistance | - | 130 mOhms | - |