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| PartNumber | VQ1006P-E3 | VQ1006P | VQ1006P-2 |
| Description | MOSFET Quad NCH 90V 4.5R | MOSFET 4N-CH 90V 0.4A 14DIP | MOSFET 4N-CH 90V 0.4A 14DIP |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | PDIP-SB-14 | - | - |
| Height | 4.45 mm | - | - |
| Length | 19.56 mm | - | - |
| Series | VN0808L/LS, VQ1006P | - | - |
| Width | 7.87 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.042329 oz | 0.042329 oz | - |
| Packaging | - | Tube | - |
| Package Case | - | PDIP-14 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | * | - |
| Number of Channels | - | 4 Channel | - |
| Supplier Device Package | - | * | - |
| Configuration | - | Quad | - |
| FET Type | - | 4 N-Channel | - |
| Power Max | - | 2W | - |
| Transistor Type | - | 4 N-Channel | - |
| Drain to Source Voltage Vdss | - | 90V | - |
| Input Capacitance Ciss Vds | - | 60pF @ 25V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 400mA | - |
| Rds On Max Id Vgs | - | 4.5 Ohm @ 1A, 10V | - |
| Vgs th Max Id | - | 2.5V @ 1mA | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 400 mA | - |
| Vds Drain Source Breakdown Voltage | - | 90 V | - |
| Rds On Drain Source Resistance | - | 4 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Channel Mode | - | Enhancement | - |