ZDT751

ZDT751TA vs ZDT751TC vs ZDT751

 
PartNumberZDT751TAZDT751TCZDT751
DescriptionBipolar Transistors - BJT Dual 60V PNPTRANS 2PNP 60V 2A SM8
ManufacturerDiodes Incorporated-Diodes Incorporated
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSM-8--
Transistor PolarityPNP-PNP
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 80 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.28 V-- 0.28 V
Maximum DC Collector Current2 A-2 A
Gain Bandwidth Product fT140 MHz-140 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesZDT751-ZDT751
Height1.6 mm--
Length6.7 mm--
PackagingReel-Digi-ReelR Alternate Packaging
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 2 A-- 2 A
Pd Power Dissipation2.75 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Package Case--SOT-223-8
Mounting Type--Surface Mount
Supplier Device Package--SM8
Power Max--2.75W
Transistor Type--2 PNP (Dual)
Current Collector Ic Max--2A
Voltage Collector Emitter Breakdown Max--60V
DC Current Gain hFE Min Ic Vce--100 @ 500mA, 2V
Vce Saturation Max Ib Ic--500mV @ 200mA, 2A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--140MHz
Pd Power Dissipation--2.75 W
Collector Emitter Voltage VCEO Max--- 60 V
Collector Base Voltage VCBO--- 80 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--70 at 50 mA at 2 V 100 at 500 mA at 2 V 80 at 1 A at 2 V 40 at 2 A at 2 V
DC Current Gain hFE Max--70
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
ZDT751TA Bipolar Transistors - BJT Dual 60V PNP
ZDT751TC TRANS 2PNP 60V 2A SM8
ZDT751TA TRANS 2PNP 60V 2A SM8
ZDT751 全新原装
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