ZHB6790

ZHB6790TA vs ZHB6790 vs ZHB6790CT

 
PartNumberZHB6790TAZHB6790ZHB6790CT
DescriptionBipolar Transistors - BJT H-Bridge-40V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSM-8--
Transistor PolarityNPNNPN-
ConfigurationQuadQuad-
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.75 V- 0.75 V-
Maximum DC Collector Current2 A2 A-
Gain Bandwidth Product fT100 MHz, 150 MHz100 MHz 150 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZHB6790ZHB6790-
DC Current Gain hFE Max500500-
Height1.6 mm--
Length6.7 mm--
PackagingReelCut Tape (CT) Alternate Packaging-
Width3.7 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min500 at 100 mA, 2 V at NPN, 400 at 1 A, 2 V at NPN, 150 at 2 A, 2 V at NPN, 300 at 100 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP, 150 at 2 A, 2 V at PNP--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Package Case-SOT-223-8-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-1.25W-
Transistor Type-2 NPN, 2 PNP (H-Bridge)-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-200 @ 1A, 2V-
Vce Saturation Max Ib Ic-750mV @ 50mA, 2A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-2000 mW-
Collector Emitter Voltage VCEO Max-40 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-TRANS 2NPN/2PNP 40V 2A SOT223-
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
ZHB6790TA Bipolar Transistors - BJT H-Bridge-40V
ZHB6790TC Bipolar Transistors - BJT H-Bridge-40V
ZHB6790TA TRANS 2NPN/2PNP 40V 2A SOT223
ZHB6790 全新原装
ZHB6790CT 全新原装
ZHB6790TC TRANS 2NPN/2PNP 40V 2A SOT223
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