 |  | | |
| PartNumber | ZVP4525E6TA | ZVP4525E6 | ZVP4525E6-7 |
| Description | MOSFET P-Chnl 250V | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 197 mA | - | - |
| Rds On Drain Source Resistance | 14 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 40 V | - | - |
| Qg Gate Charge | 2.45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Single | Single Quad Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Cut Tape (CT) Alternate Packaging | - |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZVP4525 | ZVP4525 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Type | FET | - | - |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 80 mS | - | - |
| Fall Time | 3.78 ns | 3.78 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.78 ns | 3.78 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 17.5 ns | 17.5 ns | - |
| Typical Turn On Delay Time | 1.53 ns | 1.53 ns | - |
| Unit Weight | 0.000282 oz | 0.000529 oz | - |
| Package Case | - | SOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-23-6 | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 1.1W | - |
| Drain to Source Voltage Vdss | - | 250V | - |
| Input Capacitance Ciss Vds | - | 73pF @ 25V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 197mA (Ta) | - |
| Rds On Max Id Vgs | - | 14 Ohm @ 200mA, 10V | - |
| Vgs th Max Id | - | 2V @ 1mA | - |
| Gate Charge Qg Vgs | - | 3.45nC @ 10V | - |
| Pd Power Dissipation | - | 1.1 W | - |
| Vgs Gate Source Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | - 197 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 250 V | - |
| Rds On Drain Source Resistance | - | 14 Ohms | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZVP4525E6TA | MOSFET P-Chnl 250V | |
| ZVP4525E6 | 全新原装 | ||
| ZVP4525E6-7 | 全新原装 | ||
| ZVP4525E6TA | 全新原装 | ||
| ZVP4525E6TAPBF | 全新原装 | ||
| ZVP4525E6TC | MOSFET P-CH 250V 0.197A SOT23-6 | ||
| ZVP4525E6TA-CUT TAPE | 全新原装 |