ZXT13P2

ZXT13P20DE6TA vs ZXT13P20DE6 vs ZXT13P20DE6TA/P20D

 
PartNumberZXT13P20DE6TAZXT13P20DE6ZXT13P20DE6TA/P20D
DescriptionBipolar Transistors - BJT 20V PNP SuperSOT4
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-6--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 25 V--
Emitter Base Voltage VEBO7.5 V--
Collector Emitter Saturation Voltage- 165 mV--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT90 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesZXT13P--
DC Current Gain hFE Max300 at 10 mA, 2 V--
Height1.3 mm--
Length3.1 mm--
PackagingReel--
Width1.8 mm--
BrandDiodes Incorporated--
Continuous Collector Current- 4 A--
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 4 A, 2 V, 20 at 10 A, 2 V--
Pd Power Dissipation1.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000229 oz--
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
ZXT13P20DE6TA Bipolar Transistors - BJT 20V PNP SuperSOT4
ZXT13P20DE6 全新原装
ZXT13P20DE6TA 全新原装
ZXT13P20DE6TA/P20D 全新原装
ZXT13P20DE6TAPBF 全新原装
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