ZXTP03

ZXTP03200BZTA vs ZXTP03200BG vs ZXTP03200BGTA

 
PartNumberZXTP03200BZTAZXTP03200BGZXTP03200BGTA
DescriptionBipolar Transistors - BJT 200V PNP Low Vce 2A Ic 160mV Vce 2.4WBipolar Transistors - BJT 200V PNP Low Vce 2A Ic Vceo -200V
ManufacturerDiodes Incorporated-
Product CategoryBipolar Transistors - BJT-IC Chips
RoHSY--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-89-3--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max200 V--
Collector Base Voltage VCBO220 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage260 mV-- 37 mV
Maximum DC Collector Current2 A-- 5 A
Gain Bandwidth Product fT105 MHz-105 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesZXTP032-ZXTP032
DC Current Gain hFE Max300-300 at - 1 A at - 5 V
PackagingReel-Reel
BrandDiodes Incorporated--
Continuous Collector Current2 A--
Pd Power Dissipation1.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.004603 oz-0.000282 oz
Package Case--SOT-223-3
Pd Power Dissipation--11.9 W
Collector Emitter Voltage VCEO Max--- 200 V
Collector Base Voltage VCBO--- 220 V
Emitter Base Voltage VEBO--- 7 V
DC Collector Base Gain hfe Min--100 at - 1 A at - 5 V
制造商 型号 描述 RFQ
Diodes Incorporated
Diodes Incorporated
ZXTP03200BZTA Bipolar Transistors - BJT 200V PNP Low Vce 2A Ic 160mV Vce 2.4W
ZXTP03200BG 全新原装
ZXTP03200BGTA Bipolar Transistors - BJT 200V PNP Low Vce 2A Ic Vceo -200V
ZXTP03200BZTA Bipolar Transistors - BJT 200V PNP Low Vce 2A Ic 160mV Vce 2.4W
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