 |  |  | |
| PartNumber | ZXTP2008ZTA | ZXTP2008ZQTA | ZXTP2008Z |
| Description | Bipolar Transistors - BJT 30V PNP Low Sat | Bipolar Transistors - BJT Pwr Mid Perf Transistor | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | SOT-89-3 | - |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 30 V | - 30 V | - |
| Collector Base Voltage VCBO | - 30 V | - 50 V | - |
| Emitter Base Voltage VEBO | 7 V | - 7 V | - |
| Maximum DC Collector Current | 5.5 A | - 5.5 A | 5.5 A |
| Gain Bandwidth Product fT | 110 MHz | 110 MHz | 110 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | ZXTP2008 | - | ZXTP2008 |
| DC Current Gain hFE Max | 300 | 300 | 300 |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Width | 2.6 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Pd Power Dissipation | 2100 mW | 12 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001834 oz | - | 0.001834 oz |
| Technology | - | Si | - |
| Collector Emitter Saturation Voltage | - | - 130 mV | - |
| Continuous Collector Current | - | - 5.5 A | - |
| DC Collector/Base Gain hfe Min | - | 100 | - |
| Package Case | - | - | TO-243AA |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-89-3 |
| Power Max | - | - | 2.1W |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 5.5A |
| Voltage Collector Emitter Breakdown Max | - | - | 30V |
| DC Current Gain hFE Min Ic Vce | - | - | 100 @ 1A, 1V |
| Vce Saturation Max Ib Ic | - | - | 175mV @ 500mA, 5.5A |
| Current Collector Cutoff Max | - | - | 20nA (ICBO) |
| Frequency Transition | - | - | 110MHz |
| Pd Power Dissipation | - | - | 2100 mW |
| Collector Emitter Voltage VCEO Max | - | - | 30 V |
| Collector Base Voltage VCBO | - | - | - 30 V |
| Emitter Base Voltage VEBO | - | - | 7 V |
| DC Collector Base Gain hfe Min | - | - | 100 |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXTP2008ZTA | Bipolar Transistors - BJT 30V PNP Low Sat | |
| ZXTP2008ZQTA | Bipolar Transistors - BJT Pwr Mid Perf Transistor | ||
| ZXTP2008Z | 全新原装 | ||
| ZXTP2008ZTA-CUT TAPE | 全新原装 | ||
| ZXTP2008ZTA | Bipolar Transistors - BJT 30V PNP Low Sat |