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IKW50N65F5FKSA1

IKW50N65F5FKSA1
Mfr. #:
IKW50N65F5FKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors IGBT PRODUCTS
生命周期:
制造商新产品。
数据表:
IKW50N65F5FKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IKW50N65F5FKSA1 Datasheet
ECAD Model:
更多信息:
IKW50N65F5FKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.6 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
80 A
Pd - 功耗：
305 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 F5
打包：
管子
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKW50N65F5 SP000973420
单位重量：
1.340411 oz
Tags
IKW50N65F, IKW50N65, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 305000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IKW50N65F5 Series 650 V 80 A 305 W Through Hole DuoPack IGBT - PG-TO-247-3
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
型号 制造商 描述 库存 价格
IKW50N65F5FKSA1
DISTI # 33145366		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		270
  • 150:$2.3364
  • 5:$2.6433
IKW50N65F5FKSA1
DISTI # IKW50N65F5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 2640:$2.5351
  • 720:$3.1562
  • 240:$3.7076
  • 25:$4.2780
  • 10:$4.5250
  • 1:$5.0400
IKW50N65F5FKSA1
DISTI # V99:2348_06378386		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 500:$2.8080
  • 250:$3.1380
  • 100:$3.3240
  • 10:$3.8200
  • 1:$4.4640
IKW50N65F5FKSA1
DISTI # V36:1790_06378386		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IKW50N65F5FKSA1
    DISTI # IKW50N65F5FKSA1    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW50N65F5FKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 1440:$2.2900
    • 2400:$2.2900
    • 960:$2.3900
    • 480:$2.4900
    • 240:$2.5900
    IKW50N65F5FKSA1
    DISTI # IKW50N65F5    		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: IKW50N65F5)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Asia - 0
      IKW50N65F5FKSA1
      DISTI # SP000973420      		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973420)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 50:€1.9900
      • 100:€1.9900
      • 500:€1.9900
      • 1000:€1.9900
      • 25:€2.0900
      • 1:€2.1900
      • 10:€2.1900
      IKW50N65F5FKSA1
      DISTI # 33X0415      		Infineon Technologies AGIGBT, 650V, 80A, 175DEG C, 305W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:305W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,MSL:- RoHS Compliant: Yes130
      • 100:$4.5700
      • 50:$4.7800
      • 25:$5.0000
      • 10:$5.2100
      • 1:$6.0600
      IKW50N65F5FKSA1
      DISTI # 726-IKW50N65F5FKSA1      		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
      RoHS: Compliant      		127
      • 1:$4.7900
      • 10:$4.0700
      • 100:$3.5300
      • 250:$3.3500
      • 500:$3.0000
      IKW50N65F5
      DISTI # 726-IKW50N65F5-ES      		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
      RoHS: Compliant      		0
      • 240:$3.5300
      • 480:$3.3500
      • 720:$3.0000
      IKW50N65F5FKSA1
      DISTI # 1109112P      		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU2
      • 200:£2.3680
      • 80:£2.5950
      • 40:£2.7150
      • 8:£2.9880
      IKW50N65F5FKSA1
      DISTI # 2363295      		Infineon Technologies AGIGBT, 650V, 50A, TO247-3182
      • 500:£2.3700
      • 250:£2.6500
      • 100:£2.7900
      • 10:£3.2100
      • 1:£4.2100
      IKW50N65F5FKSA1
      DISTI # IKW50N65F5      		Infineon Technologies AG650V 80A 305W TO247
      RoHS: Compliant      		150
      • 1:€5.9000
      • 10:€2.9000
      • 50:€1.9000
      • 100:€1.8300
      图片 型号 描述
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      Mfr.#: AIGW50N65F5XKSA1

      OMO.#: OMO-AIGW50N65F5XKSA1

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      Mfr.#: VS-CPU6006L-N3

      OMO.#: OMO-VS-CPU6006L-N3

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      Mfr.#: DMP3099L-7

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      Mfr.#: EEF-GX0E471R

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      OMO.#: OMO-KDZVTFTR33B-37

      		 ZENER DIODES (CORRESPONDS TO AEC
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      Mfr.#: ESD-SR-100

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      		 EMI/RFI Suppressors & Ferrites Ferrite Clamp On Cores Ferrite EMI 16.5mm Split/Snap-On
      可用性
      库存:
      Available
      订购:
      1985
      输入数量:
      IKW50N65F5FKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$4.79
      US$4.79
      10
      US$4.07
      US$40.70
      100
      US$3.53
      US$353.00
      250
      US$3.35
      US$837.50
      500
      US$3.00
      US$1 500.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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