STB6N65M2

STB6N65M2
Mfr. #:
STB6N65M2
制造商:
STMicroelectronics
描述:
MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package
生命周期:
制造商新产品。
数据表:
STB6N65M2 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STB6N65M2 更多信息 STB6N65M2 Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
TO-263-3
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
650 V
Id - 连续漏极电流:
4 A
Rds On - 漏源电阻:
1.35 Ohms
Vgs th - 栅源阈值电压:
3 V
Vgs - 栅源电压:
25 V
Qg - 门电荷:
9.8 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
60 W
配置:
单身的
商品名:
网状网
打包:
卷轴
产品:
功率MOSFET
系列:
STB6N65M2
晶体管类型:
1 N-Channel
品牌:
意法半导体
秋季时间:
20 ns
产品类别:
MOSFET
上升时间:
7 ns
出厂包装数量:
1000
子类别:
MOSFET
典型关断延迟时间:
6.5 ns
典型的开启延迟时间:
19 ns
单位重量:
0.139332 oz
Tags
STB6N6, STB6N, STB6, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Power Mosfet, N Channel, 4 A, 650 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 4A 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 650V 4A 3-Pin D2PAK T/R
***i-Key
MOSFET N-CH 650V 4A D2PAK
***ronik
N-CH 650V 4A 1350mOhm TO263
***ment14 APAC
Prices include import duty and tax. MOSFET, N CHANNEL, 650V, 4A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)
***nell
MOSFET, N CHANNEL, 650V, 4A, TO-263-3; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):1.2ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:60W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Ftalany - zgodność z RoHS:Tak; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (17-Dec-2015)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
型号 制造商 描述 库存 价格
STB6N65M2
DISTI # V72:2272_17710328
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
770
  • 75000:$0.8344
  • 30000:$0.8432
  • 15000:$0.8520
  • 6000:$0.8608
  • 3000:$0.8696
  • 1000:$0.8784
  • 500:$1.0289
  • 250:$1.0390
  • 100:$1.1544
  • 50:$1.2163
  • 25:$1.2446
  • 10:$1.3829
  • 1:$1.7240
STB6N65M2
DISTI # 497-15047-1-ND
STMicroelectronicsMOSFET N-CH 650V 4A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
166In Stock
  • 500:$1.2392
  • 100:$1.5933
  • 10:$1.9830
  • 1:$2.2000
STB6N65M2
DISTI # 497-15047-6-ND
STMicroelectronicsMOSFET N-CH 650V 4A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
166In Stock
  • 500:$1.2392
  • 100:$1.5933
  • 10:$1.9830
  • 1:$2.2000
STB6N65M2
DISTI # 497-15047-2-ND
STMicroelectronicsMOSFET N-CH 650V 4A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 10000:$0.8750
  • 5000:$0.8938
  • 2000:$0.9281
  • 1000:$0.9969
STB6N65M2
DISTI # 25930001
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
770
  • 6000:$0.8837
  • 3000:$0.8866
  • 1000:$0.9443
  • 500:$1.1061
  • 250:$1.1169
  • 100:$1.2410
  • 50:$1.3075
  • 25:$1.3379
  • 10:$1.4866
  • 8:$1.6848
STB6N65M2
DISTI # STB6N65M2
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin D2PAK T/R (Alt: STB6N65M2)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel
Europe - 0
  • 5000:€0.6870
  • 1000:€0.7130
  • 500:€0.9290
  • 250:€0.9950
  • 100:€1.0600
  • 25:€1.3300
  • 5:€1.4500
STB6N65M2
DISTI # STB6N65M2
STMicroelectronicsTrans MOSFET N-CH 650V 4A 3-Pin D2PAK T/R - Tape and Reel (Alt: STB6N65M2)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.7979
  • 6000:$0.8139
  • 4000:$0.8519
  • 2000:$0.8919
  • 1000:$0.9369
STB6N65M2
DISTI # 26Y5736
STMicroelectronicsPower MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V0
  • 30000:$0.7820
  • 18000:$0.8130
  • 12000:$0.8440
  • 6000:$0.9380
  • 3000:$0.9880
  • 1:$1.0500
STB6N65M2
DISTI # 40Y2593
STMicroelectronicsPower MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes655
  • 500:$1.1000
  • 250:$1.1800
  • 100:$1.2600
  • 50:$1.3700
  • 25:$1.4700
  • 10:$1.5800
  • 1:$1.8500
STB6N65M2
DISTI # 511-STB6N65M2
STMicroelectronicsMOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package
RoHS: Compliant
3
  • 1:$1.8300
  • 10:$1.5600
  • 100:$1.2500
  • 500:$1.0900
  • 1000:$0.9070
  • 2000:$0.8440
  • 5000:$0.8130
  • 10000:$0.7820
STB6N65M2STMicroelectronics 2284
    STB6N65M2
    DISTI # 2460386
    STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-263-3
    RoHS: Compliant
    655
    • 10000:$1.2100
    • 5000:$1.2600
    • 2000:$1.3000
    • 1000:$1.4000
    • 500:$1.6800
    • 100:$1.9200
    • 10:$2.4000
    • 1:$2.8200
    STB6N65M2
    DISTI # 2460386RL
    STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-263-3
    RoHS: Compliant
    0
    • 10000:$1.2100
    • 5000:$1.2600
    • 2000:$1.3000
    • 1000:$1.4000
    • 500:$1.6800
    • 100:$1.9200
    • 10:$2.4000
    • 1:$2.8200
    STB6N65M2
    DISTI # 2460386
    STMicroelectronicsMOSFET, N CHANNEL, 650V, 4A, TO-263-3695
    • 500:£0.8400
    • 250:£0.9010
    • 100:£0.9620
    • 25:£1.2000
    • 5:£1.3100
    STB6N65M2STMicroelectronicsPower Field-Effect Transistor
    RoHS: Compliant
    Europe - 1000
      STB6N65M2
      DISTI # TMOSP12859
      STMicroelectronicsN-CH 650V 4A 1350mOhm TO263Stock DE - 0Stock HK - 0Stock US - 0
      • 1000:$1.0194
      • 2000:$0.9611
      • 3000:$0.9028
      • 4000:$0.7864
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      可用性
      库存:
      Available
      订购:
      1986
      输入数量:
      STB6N65M2的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$1.83
      US$1.83
      10
      US$1.56
      US$15.60
      100
      US$1.25
      US$125.00
      500
      US$1.09
      US$545.00
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