FDFME2P823ZT

Mfr. #:: FDFME2P823ZT
制造商:: ON Semiconductor
描述:: IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
生命周期:: 制造商新产品。
数据表:: FDFME2P823ZT 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 仙童半导体

产品分类: 晶体管 - FET、MOSFET - 单

打包: 卷轴

单位重量: 0.000889 oz

安装方式: 贴片/贴片

包装盒: microFET-6

技术: 硅

通道数: 2 Channel

配置: 单用肖特基二极管

晶体管型: 2 P-Channel

钯功耗: 1.3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 16 ns

上升时间: 4.8 ns

VGS-栅极-源极-电压: +/- 8 V

Id 连续漏极电流: - 2.3 A

Vds-漏-源-击穿电压: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 0.6 V

Rds-On-Drain-Source-Resistance: 95 mOhms

晶体管极性: P-通道

典型关断延迟时间: 33 ns

典型开启延迟时间: 4.7 ns

Qg-门电荷: 5.5 nC

正向跨导最小值: 7 S

Tags: FDFME, FDFM, FDF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME2P823ZT 描述

***p One Stop Global: Trans MOSFET P-CH 20V 2.3A 6-Pin MicroFET T/R

***nell: MOSFET, P CH, 20V, 2.6A, 6MICROFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

型号	制造商	描述	库存	价格
FDFME2P823ZT DISTI # FDFME2P823ZTTR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTCT-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTDKR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME2P823ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
FDFME2P823ZT DISTI # 512-FDFME2P823ZT	ON Semiconductor	MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS: Compliant	0

FDFME2P823ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes