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| PartNumber | FDFME3N311ZT | FDFME2P823ZT | FDFME3N311ZT/1T |
| Description | MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode | IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode | |
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | MicroFET-6 | - | - |
| Number of Channels | 1 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 1.6 A | - | - |
| Rds On Drain Source Resistance | 299 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Single | Single with Schottky Diode | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Reel | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | FDFME3N311ZT | - | - |
| Transistor Type | 1 N-Channel | 2 P-Channel | - |
| Type | Power Trench MOSFET | - | - |
| Width | 2 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 2.8 S | - | - |
| Fall Time | 2.8 ns | 16 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | 4.8 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | 33 ns | - |
| Typical Turn On Delay Time | 12 ns | 4.7 ns | - |
| Unit Weight | 0.000889 oz | 0.000889 oz | - |
| Package Case | - | microFET-6 | - |
| Pd Power Dissipation | - | 1.3 W | - |
| Vgs Gate Source Voltage | - | +/- 8 V | - |
| Id Continuous Drain Current | - | - 2.3 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 0.6 V | - |
| Rds On Drain Source Resistance | - | 95 mOhms | - |
| Qg Gate Charge | - | 5.5 nC | - |
| Forward Transconductance Min | - | 7 S | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDFME3N311ZT | MOSFET Int. NCh PowerTrench MOSFET & Sch. Diode | |
ON Semiconductor |
FDFME2P823ZT | IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode | |
| FDFME3N311ZT | MOSFET N-CH 30V 1.8A 6MICROFET | ||
| FDFME3N311ZT/1T | 全新原装 |