SI8808DB-T2-E1

SI8808DB-T2-E1
Mfr. #:
SI8808DB-T2-E1
制造商:
Vishay
描述:
MOSFET N-CH 30V MICROFOOT
生命周期:
制造商新产品。
数据表:
SI8808DB-T2-E1 数据表
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SI8808DB-T2-E1 更多信息
产品属性
属性值
制造商
威世硅
产品分类
FET - 单
系列
沟槽FETR
打包
Digi-ReelR 替代包装
安装方式
贴片/贴片
商品名
微足
包装盒
4-UFBGA
技术
工作温度
-55°C ~ 150°C (TJ)
安装型
表面贴装
通道数
1 Channel
供应商-设备-包
4-Microfoot
配置
单身的
FET型
MOSFET N 沟道,金属氧化物
最大功率
500mW
晶体管型
1 N-Channel
漏源电压 Vdss
30V
输入电容-Ciss-Vds
330pF @ 15V
FET-Feature
标准
Current-Continuous-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
95 mOhm @ 1A, 4.5V
Vgs-th-Max-Id
900mV @ 250μA
栅极电荷-Qg-Vgs
10nC @ 8V
钯功耗
900 mW
最高工作温度
+ 150 C
最低工作温度
- 55 C
VGS-栅极-源极-电压
8 V
Id 连续漏极电流
2.5 A
Vds-漏-源-击穿电压
30 V
VGS-th-Gate-Source-Threshold-Voltage
0.9 V
Rds-On-Drain-Source-Resistance
95 mOhms
晶体管极性
N通道
Qg-门电荷
3.7 nC
正向跨导最小值
10 S
Tags
SI880, Si88, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R
***et
N-CHANNEL 30 V (D-S) MOSFET
***
N-CHANNEL 8-V (D-S) MOSFET
***i-Key
MOSFET N-CH 30V MICROFOOT
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.071Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:900Mv; Power Dissipation Pd:900Mw; No. Of Pins:4Pins Rohs Compliant: No
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
型号 制造商 描述 库存 价格
SI8808DB-T2-E1
DISTI # V72:2272_09216536
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant
5955
  • 3000:$0.1448
  • 1000:$0.1577
  • 500:$0.2033
  • 250:$0.2384
  • 100:$0.2480
  • 25:$0.3001
  • 10:$0.3335
  • 1:$0.4370
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1CT-ND
Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
22093In Stock
  • 1000:$0.1872
  • 500:$0.2423
  • 100:$0.3304
  • 10:$0.4410
  • 1:$0.5200
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1DKR-ND
Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
22093In Stock
  • 1000:$0.1872
  • 500:$0.2423
  • 100:$0.3304
  • 10:$0.4410
  • 1:$0.5200
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1TR-ND
Vishay SiliconixMOSFET N-CH 30V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
21000In Stock
  • 3000:$0.1657
SI8808DB-T2-E1
DISTI # 25790129
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot
RoHS: Compliant
5955
  • 3000:$0.1448
  • 1000:$0.1577
  • 500:$0.2033
  • 250:$0.2384
  • 100:$0.2480
  • 51:$0.3001
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 6000
  • 3000:$0.1949
  • 6000:$0.1939
  • 12000:$0.1939
  • 18000:$0.1929
  • 30000:$0.1929
SI8808DB-T2-E1
DISTI # SI8808DB-T2-E1
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.2329
  • 6000:€0.1589
  • 12000:€0.1369
  • 18000:€0.1259
  • 30000:€0.1169
SI8808DB-T2-E1.
DISTI # 28AC2185
Vishay IntertechnologiesN-CHANNEL 30 V (D-S) MOSFET , ROHS COMPLIANT: NO6000
  • 1:$0.1620
  • 3000:$0.1620
SI8808DB-T2-E1
DISTI # 78-SI8808DB-T2-E1
Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
RoHS: Compliant
3856
  • 1:$0.4600
  • 10:$0.3510
  • 100:$0.2610
  • 500:$0.2140
  • 1000:$0.1660
  • 3000:$0.1620
SI8808DBT2E1Vishay Intertechnologies 
RoHS: Compliant
Europe - 3000
    SI8808DB-T2-E1
    DISTI # C1S803602004241
    Vishay IntertechnologiesMOSFETs5955
    • 100:$0.2480
    • 50:$0.2949
    • 25:$0.3277
    • 10:$0.3335
    SI8808DB-T2-E1Vishay IntertechnologiesMOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
    RoHS: Compliant
    Americas -
      图片 型号 描述
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1

      MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8
      SI8808DB-T2-E1

      Mfr.#: SI8808DB-T2-E1

      OMO.#: OMO-SI8808DB-T2-E1-VISHAY

      MOSFET N-CH 30V MICROFOOT
      SI8808DBT2E1

      Mfr.#: SI8808DBT2E1

      OMO.#: OMO-SI8808DBT2E1-1190

      Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      可用性
      库存:
      Available
      订购:
      3000
      输入数量:
      SI8808DB-T2-E1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$0.24
      US$0.24
      10
      US$0.23
      US$2.31
      100
      US$0.22
      US$21.87
      500
      US$0.21
      US$103.30
      1000
      US$0.19
      US$194.40
      从...开始
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