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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SI8808DB-T2-E1 DISTI # V72:2272_09216536 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant | 4380 |
|
| SI8808DB-T2-E1 DISTI # V36:1790_09216536 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant | 0 |
|
| SI8808DB-T2-E1 DISTI # V99:2348_09216536 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant | 0 |
|
| SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1CT-ND | Vishay Siliconix | MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 47618In Stock |
|
| SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1DKR-ND | Vishay Siliconix | MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 47618In Stock |
|
| SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1TR-ND | Vishay Siliconix | MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 45000In Stock |
|
| SI8808DB-T2-E1 DISTI # 25790129 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant | 4380 |
|
| SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI8808DB-T2-E1. DISTI # 28AC2185 | Vishay Intertechnologies | Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:900mV,Power Dissipation Pd:900mW,No. of Pins:4Pins RoHS Compliant: No | 0 |
|
| SI8808DB-T2-E1 DISTI # 78-SI8808DB-T2-E1 | Vishay Intertechnologies | MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant | 4901 |
|
| SI8808DBT2E1 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI8808DB-T2-E1 | Vishay Intertechnologies | MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant | Americas - |
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: SI8808DB-T2-E1 OMO.#: OMO-SI8808DB-T2-E1 |
MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 |
|
Mfr.#: SI8808DB-T2-E1 OMO.#: OMO-SI8808DB-T2-E1-VISHAY |
MOSFET N-CH 30V MICROFOOT |
|
Mfr.#: SI8808DBT2E1 OMO.#: OMO-SI8808DBT2E1-1190 |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |