MR25H128APDF

MR25H128APDF
Mfr. #:
MR25H128APDF
制造商:
Everspin Technologies
描述:
NVRAM MRAM Serial-SPI 128Kbit 3.3V 8-Pin DFN EP Tray
生命周期:
制造商新产品。
数据表:
MR25H128APDF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
MR25H128APDF 更多信息
产品属性
属性值
Tags
MR25H12, MR25H1, MR25H, MR25, MR2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    D***n
    D***n
    BY

    They put it in the mailbox. All as in the description. Exactly 10 grand. All workers. It came in 2,5 weeks. Bought for led light bulb in replacement of burnt leds.

    2019-08-09
    I***i
    I***i
    TR

    it was very accurate but the paket was damaged and some pins were bended.

    2019-06-01
***ical
NVRAM MRAM Serial-SPI 128Kbit 3.3V 8-Pin DFN EP Tray
Serial SPI MRAMs
Everspin Technologies MR25H256 / MR25H10 /MRH25H128 / MR25H40 SPI Serial MRAM devices offer serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, both reads and writes can occur randomly in memory with no delay between writes. 
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
型号 制造商 描述 库存 价格
MR25H128APDF
DISTI # 33642238
Everspin TechnologiesNVRAM MRAM Serial-SPI 128Kbit 3.3V 8-Pin DFN EP Tray429
  • 13:$6.7333
MR25H128APDFR
DISTI # V36:1790_16589610
Everspin TechnologiesNVRAM MRAM Serial-SPI 128Kbit 3.3V 8-Pin DFN EP T/R0
  • 4000000:$5.1390
  • 2000000:$5.1410
  • 400000:$5.2700
  • 40000:$5.4760
  • 4000:$5.5100
MR25H128APDF
DISTI # 936-MR25H128APDF
Everspin TechnologiesNVRAM 128Kb 3.3V 16Kx8 SPI
RoHS: Compliant
1078
  • 1:$7.6100
  • 10:$7.0000
  • 25:$6.8600
  • 50:$6.8300
  • 100:$6.1300
  • 250:$5.9400
  • 500:$5.6500
  • 1000:$5.4500
MR25H128APDFR
DISTI # 936-MR25H128APDFR
Everspin TechnologiesNVRAM 128Kb 3.3V 16Kx8 SPI
RoHS: Compliant
0
  • 4000:$5.5100
图片 型号 描述
MR25H128APDF

Mfr.#: MR25H128APDF

OMO.#: OMO-MR25H128APDF

NVRAM 128Kb 3.3V 16Kx8 SPI
MR25H10CDC

Mfr.#: MR25H10CDC

OMO.#: OMO-MR25H10CDC

NVRAM 1Mb 3.3V 128Kx8 Serial MRAM
MR25H128APDFR

Mfr.#: MR25H128APDFR

OMO.#: OMO-MR25H128APDFR

NVRAM 128Kb 3.3V 16Kx8 SPI
MR25H128ACDFR

Mfr.#: MR25H128ACDFR

OMO.#: OMO-MR25H128ACDFR

NVRAM 128Kb 3.3V 16Kx8 SPI
MR25H10MDCR

Mfr.#: MR25H10MDCR

OMO.#: OMO-MR25H10MDCR-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3V 128Kx8 Serial MRAM
MR25H10MDFR

Mfr.#: MR25H10MDFR

OMO.#: OMO-MR25H10MDFR-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 SPI
MR25H10CDFR

Mfr.#: MR25H10CDFR

OMO.#: OMO-MR25H10CDFR-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 Serial MRAM
MR25H10MDF

Mfr.#: MR25H10MDF

OMO.#: OMO-MR25H10MDF-EVERSPIN-TECHNOLOGIES

NVRAM 1Mb 3.3V 128Kx8 SPI
MR25H10BDC

Mfr.#: MR25H10BDC

OMO.#: OMO-MR25H10BDC-1190

全新原装
MR25H16CDC

Mfr.#: MR25H16CDC

OMO.#: OMO-MR25H16CDC-1190

全新原装
可用性
库存:
Available
订购:
1000
输入数量:
MR25H128APDF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
从...开始
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