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型号 | 制造商 | 描述 | 库存 | 价格 |
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SEMIX653GB176HDS DISTI # 16M0126 | SEMIKRON | IGBT POWER MODULE,Transistor Polarity:N Channel,DC Collector Current:619A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2V,No. of Pins:16Pins,Product Range:- RoHS Compliant: Yes | 0 |
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SEMIX653GB176HDS DISTI # 70098315 | SEMIKRON | IGBT,1700 V,660 A @ 25 DegC,650 A @ 80 DegC,1.7 V @ 25 degC RoHS: Compliant | 0 |
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图片 | 型号 | 描述 |
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Mfr.#: SEMIX653GAL176HDS OMO.#: OMO-SEMIX653GAL176HDS-1190 |
IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1 | |
Mfr.#: SEMIX653GB176HDS OMO.#: OMO-SEMIX653GB176HDS-1190 |
IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V, | |
Mfr.#: SEMIX653GD176HDC OMO.#: OMO-SEMIX653GD176HDC-1190 |
IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC |