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SEMI |
全新原装 |
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| SEMI-TECHMZ-01 |
全新原装 |
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| SEMI201209U3R3KT |
全新原装 |
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| SEMI202GB128DS |
全新原装 |
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| SEMI2606 |
全新原装 |
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| SEMI322513U4R7KT(4.7UH |
全新原装 |
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| SEMI4402A |
全新原装 |
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| SEMI4402BCD |
全新原装 |
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| SEMI6406 |
全新原装 |
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| SEMI8401 |
全新原装 |
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| SEMIBZX84C3V3LT1 |
全新原装 |
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| SEMICONDCTORS |
全新原装 |
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| SEMICONDUCTOR |
全新原装 |
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| SEMICONDUCTOR SELECTION |
全新原装 |
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| SEMICONOUCTOR |
全新原装 |
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| SEMIKRON |
全新原装 |
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| SEMIPACK |
全新原装 |
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| SEMITEC-S-452T; |
全新原装 |
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| SEMITRANSM1 |
全新原装 |
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| SEMIV/R220K |
全新原装 |
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| SEMIX101GD066HDS |
全新原装 |
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| SEMIX101GD126HDS |
IGBT MODULE, SIX, 1.2KV, 129A, Transistor Polarity:Six NPN, DC Collector Current:129A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce |
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| SEMIX101GD128DC |
全新原装 |
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| SEMIX101GD128DS |
全新原装 |
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| SEMIX101GD12E4S |
全新原装 |
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| SEMIX101GD12T4S |
全新原装 |
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| SEMIX151GB12E4V4 |
全新原装 |
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| SEMIX151GB12T4S |
Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel |
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| SEMIX151GD126HDS |
SEMIX, Trench IGBT Module, 1200V, 100A |
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| SEMIX151GD128DS |
全新原装 |
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| SEMIX151GD12E4S |
IGBT MODULE, SIX, 1.2KV, 232A, Transistor Polarity:Six NPN, DC Collector Current:232A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ce |
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| SEMIX171KH16S |
RECTIFIER/THYRISTOR DIODE MODULE, 1600V, SEMIX |
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| SEMIX201GD128DS |
全新原装 |
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| SEMIX202GB066HD |
全新原装 |
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| SEMIX202GB066HDS |
IGBT MODULE, DUAL, 600V, 275A, Transistor Polarity:Dual NPN, DC Collector Current:275A, Collector Emitter Saturation Voltage Vce(on):1.45V, Power Dissipation Pd:45W, Collector Emitter Voltage V(b |
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| SEMIX202GB128D |
全新原装 |
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| SEMIX202GB128DS |
全新原装 |
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| SEMIX202GB12E4S |
全新原装 |
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| SEMIX202GB12T4S |
全新原装 |
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| SEMIX202GB12V4S |
全新原装 |
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| SEMIX202GB12VS |
IGBT, MODULE, 1.2KV, 310A, Transistor Polarity:Dual NPN, DC Collector Current:310A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo: |
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| SEMIX223GD12E4C |
全新原装 |
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| SEMIX241DH16S |
THYRISTOR DIODE MODULE 300A, 1.6KV, SCR Module Type:Bridge Rectifier, Three Phase - SCR / Diode, Peak Repetitive Off-State Voltage, Vdrm:1.6kV, Gate Trigger Current Max, Igt:150mA, Current It av:2 |
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| SEMIX241MD008S |
全新原装 |
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| SEMIX251GD126HDS |
IGBT, 1200 V, 250 A @ 25 DegC, 260 A @ 80 DegC, 1.7 V @ 25 degC |
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| SEMIX252GB126HD |
全新原装 |
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| SEMIX252GB126HDS |
IGBT MODULE, DUAL, 1.2KV, 242A, Transistor Polarity:Dual NPN, DC Collector Current:242A, Collector Emitter Saturation Voltage Vce(on):1.7V, Power Dissipation Pd:-, Collector Emitter Voltage V(br) |
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| SEMIX253GB126HD |
全新原装 |
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| SEMIX253GD126HDC |
全新原装 |
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| SEMIX291D16S |
全新原装 |
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